band switching diodes BA782S-V, ba783s-v vishay semiconductors document number: 85709 for technical questions within your region, please contact one of the following: www.vishay.com rev. 1.6, 05-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 mechanical data case: sod-323 weight: approx. 4.3 mg packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/3k per 7" reel (8 mm tape), 15k/box features ? these diodes are also available in sod-123 case with the type designations ba782-v and ba783-v ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec description silicon epitaxial planar diode switches for electric bandswitching in radio and tv tuners in the frequency range of (50 to 1000) mhz. the dynamic forward resistance is constant and ve ry small over a wide range of frequency and forward current. the reverse capacitance is also small and largely independent of the reverse voltage. 20145 parts table part ordering code type marking remarks BA782S-V BA782S-V-gs18 or BA782S-V-gs08 r2 tape and reel ba783s-v ba783s-v-gs18 or ba783s-v-gs08 r3 tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test conditions symbol value unit reverse voltage v r 35 v forward continuous current i f 100 ma thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction temperature t j 125 c storage temperature range t stg - 55 to + 150 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 20 v i r 50 na diode capacitance f = 1 mhz, v r = 1 v c d1 1.5 pf f = 1 mhz, v r = 3 v BA782S-V c d2 1.25 pf ba783s-v c d2 1.2 pf dynamic forward resistance f = (50 to 1000) mhz, i f = 3 ma BA782S-V r f1 0.7 ba783s-v r f1 1.2 f = (50 to 1000) mhz, i f = 10 ma BA782S-V r f2 0.5 ba783s-v r f2 0.9 series inductance across case l s 2.5 nh
BA782S-V, ba783s-v vishay semiconductors band switching diodes document number: 85709 for technical questions within your region, please contact one of the following: www.vishay.com rev. 1.6, 05-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 2 typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - diode capacitance fig. 2 - dynamic forward resistance vs. forward current package dimensions in millimeters (inches): sod-323 t j = 25 c f = 1 mhz 1 8 79 8 110 0.1 0. 8 0.6 0.4 1.4 1.2 1.0 0.2 0 100 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 2.0 1. 8 1.6 r f - dynamic for w ard resistance ( ) 1 10 0.1 1 100 10 20330 i f - for w ard c u rrent (ma) ba7 8 2s- v 100 mhz ba7 8 3s- v 100 mhz ba7 8 2s- v , ba7 8 3s- v 1 khz t am b = 25 c foot print recommendation: rev. 5 - date: 23.sept.2009 17443 document no.:s8-v-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.10 (0.004) cathode bar 0.20 (0.008) 0.40 (0.016) 2.50 (0.098) 1.1 (0.043) 1.5 (0.059) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) 0.15 (0.006) 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) created - date: 24.augu s t.2004 0.40 (0.016) 0.25 (0.010) 0.2 (0.008) 0 to 8
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